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1

Work function measurements for gas detection using tin oxide layers with a thickness between 1 and 200 nm

B. Flietner, I. Eisele

Journal:

Thin Solid Films

Année:

1994

Langue:

english

Fichier:

PDF, 444 KB

english, 1994

2

The electrophysical properties of anodically grown silicon oxide films

G. Mende, E. Hensel, F. Fenske, H. Flietner

Journal:

Thin Solid Films

Année:

1989

Langue:

english

Fichier:

PDF, 597 KB

english, 1989

3

Influence of the oxidation process on the luminescence of HF-treated porous silicon

Th. Dittrich, H. Flietner, V.Yu. Timoshenko, P.K. Kashkarov

Journal:

Thin Solid Films

Année:

1995

Langue:

english

Fichier:

PDF, 304 KB

english, 1995

4

Defects at the Si/SiO2 interface: Their nature and behaviour in technological processes and stress

W. Füssel, M. Schmidt, H. Angermann, G. Mende, H. Flietner

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Année:

1996

Langue:

english

Fichier:

PDF, 501 KB

english, 1996

5

Evaluation of gas mixtures with different sensitive layers incorporated in hybrid FET structures

M. Leu, T. Doll, B. Flietner, J. Lechner, I. Eisele

Journal:

Sensors and Actuators B: Chemical

Année:

1994

Langue:

english

Fichier:

PDF, 628 KB

english, 1994

6

Fabrication of a hybrid field-effect structure for gas detection with diverse sensitive materials

B. Flietner, T. Doll, J. Lechner, M. Leu, I. Eisele

Journal:

Sensors and Actuators B: Chemical

Année:

1994

Langue:

english

Fichier:

PDF, 419 KB

english, 1994

7

Simulation of the lateral electrical field for the analysis of threshold voltage instabilities of suspended-gate field-effect transistors

Z. Gergintschew, D. Schipanski, P. Kornetzky, I. Eisele, B. Flietner

Journal:

Sensors and Actuators B: Chemical

Année:

1993

Langue:

english

Fichier:

PDF, 477 KB

english, 1993

8

Reliable hybrid GasFETs for work-function measurements with arbitrary materials

B. Flietner, T. Doll, J. Lechner, M. Leu, I. Eisele

Journal:

Sensors and Actuators B: Chemical

Année:

1994

Langue:

english

Fichier:

PDF, 593 KB

english, 1994

9

Dipole- and charge transfer contributions to the work function change of semiconducting thin films: experiment and theory

H. Geistlinger, I. Eisele, B. Flietner, R. Winter

Journal:

Sensors and Actuators B: Chemical

Année:

1996

Langue:

english

Fichier:

PDF, 702 KB

english, 1996

10

Interface states of the Si/SiO2 system and their separation in groups

H. Flietner, W. Füssel, N. D. Sinh

Journal:

physica status solidi (a)

Année:

1977

Langue:

english

Fichier:

PDF, 142 KB

english, 1977

11

[IEEE 2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers - Hsinchu, Taiwan (18-20 April 2001)] 2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517) - Device equivalence of logic performance in 0.18 μm and extension to 0.13 μm embedded DRAM technology

Chakravarti, S.N., Weaver, R., Iper, S.S.K., Hook, T., Sierakowski, A., Winstel, K., Spieck, J., Prakash, D.P., Xiaowei Tian,, Robson, N., Wang, H., Stillman, W., Rice, J., Flietner, B., Le-Tien Jung

Année:

2001

Langue:

english

Fichier:

PDF, 432 KB

english, 2001

12

Oberflächenleitfähigkeit unter Berücksichtigung der Streuung der Ladungsträger an der Oberfläche bei kleinen Bandverbiegungen

Journal:

Annalen der Physik

Année:

1959

Langue:

german

Fichier:

PDF, 819 KB

german, 1959

13

Feldeffekt und Reaktionen an der Oberfläche von Germanium

Journal:

Annalen der Physik

Année:

1959

Langue:

german

Fichier:

PDF, 926 KB

german, 1959

14

Localized anodic oxide films on Si: preparation and properties

G. Mende, F. Fenske, H. Flietner, M. Jeske, J.W. Schultze

Journal:

Electrochimica Acta

Année:

1994

Langue:

english

Fichier:

PDF, 551 KB

english, 1994

15

Influence of photoluminescence and trapping on the photovoltage at the por-Si/p-Si structure

V.Yu Timoshenko, P.K Kashkarov, A.B Matveeva, E.A Konstantinova, H Flietner, Th Dittrich

Journal:

Thin Solid Films

Année:

1996

Langue:

english

Fichier:

PDF, 347 KB

english, 1996

16

Defect generation at silicon surfaces during etching and initial stage of oxidation

H. Angermann, K. Kliefoth, W. Füssel, H. Flietner

Journal:

Microelectronic Engineering

Année:

1995

Langue:

english

Fichier:

PDF, 295 KB

english, 1995

17

Anodic oxidation as a method for low temperature passivation of silicon radiation detectors

G. Mende, H. Flietner, M. Deutscher

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Année:

1993

Langue:

english

Fichier:

PDF, 414 KB

english, 1993

18

Two types of traps at the SiSiO2 interface characterized by their cross sections

J. Albohn, W. Füssel, Ngo Duong Sinh, K. Kliefoth, H. Flietner, W. Fuhs

Journal:

Microelectronic Engineering

Année:

1999

Langue:

english

Fichier:

PDF, 302 KB

english, 1999

19

Density of states and relaxation spectra of etched, H-terminated and naturally oxidized Si-surfaces and the accompanied defects

H. Flietner, W. Füssel, N.D. Sinh, H. Angermann

Journal:

Applied Surface Science

Année:

1996

Langue:

english

Fichier:

PDF, 508 KB

english, 1996

20

Character of SiSiO2 interface states from analysis of the CV term spectra

H. Flietner, Ngo Duong Sinh

Journal:

physica status solidi (a)

Année:

1976

Langue:

english

Fichier:

PDF, 480 KB

english, 1976

21

Specific memory effect in MOS structures

V. G. Litovchenko, I. P. Lisovskii, R. O. Litvinov, H. Flietner, W. Füssel

Journal:

physica status solidi (a)

Année:

1979

Langue:

english

Fichier:

PDF, 198 KB

english, 1979

22

Surface state distributions at silicon surfaces

K. Heilig, H. Flietner, J. Reineke, L Ê T. T. Tuyên

Journal:

physica status solidi (a)

Année:

1981

Langue:

english

Fichier:

PDF, 186 KB

english, 1981

23

U-Shaped Distributions at Semiconductor Interfaces and the Nature of the Related Defect Centres

Journal:

physica status solidi (a)

Année:

1985

Langue:

english

Fichier:

PDF, 922 KB

english, 1985

24

RF Plasma Annealing Effects at the Wet Oxidized Si/SiO2 Interface

S. Alexandrova, A. Szekeres, W. Füssel, H. Flietner

Journal:

physica status solidi (a)

Année:

1986

Langue:

english

Fichier:

PDF, 298 KB

english, 1986

25

Electronic properties of the HF-passivated Si(111) surface during the initial oxidation in air

Th. Dittrich, H. Angermann, W. Füssel, H. Flietner

Journal:

physica status solidi (a)

Année:

1993

Langue:

english

Fichier:

PDF, 398 KB

english, 1993

26

Optical and Photoelectrical Properties of μc-Si Layers and the Influence of Subsequent Hydrogenation

R. Krankenhagen, M. Schmidt, W. Henrion, I. Sieber, B. Selle, H. Flietner

Journal:

physica status solidi (a)

Année:

1994

Langue:

english

Fichier:

PDF, 397 KB

english, 1994

27

Oberflächenbedingte Korrekturen der Beweglichkeit bei kleinen Bandverbiegungen

Journal:

physica status solidi (b)

Année:

1961

Langue:

german

Fichier:

PDF, 319 KB

german, 1961

28

Eigenschaften gewöhnlicher Halbleiteroberflächen

Journal:

physica status solidi (b)

Année:

1962

Langue:

german

Fichier:

PDF, 4.00 MB

german, 1962

29

Untersuchung der Temperaturabhängigkeit der schnellen Terme auf Germanium in trockener Sauerstoffatmosphäre

H. Flietner, G. Hundt

Journal:

physica status solidi (b)

Année:

1963

Langue:

german

Fichier:

PDF, 595 KB

german, 1963

30

Heliconwellenausbreitung in InSb und InAs

H. Flietner, K. Kliefoth

Journal:

physica status solidi (b)

Année:

1966

Langue:

german

Fichier:

PDF, 404 KB

german, 1966

31

Großsignal-Feldeffekt zur Oberflächentermbestimmung bei Silizium

H. Flietner, W. Gräpe

Journal:

physica status solidi (b)

Année:

1966

Langue:

german

Fichier:

PDF, 264 KB

german, 1966

32

Influence of Crystal Orientation and Oxide Structure on the Interface States of GeGeO2

H. Flietner, G. Oertel

Journal:

physica status solidi (b)

Année:

1970

Langue:

english

Fichier:

PDF, 314 KB

english, 1970

33

Free electron and binding model for the interface states at semiconductor surfaces

Journal:

physica status solidi (b)

Année:

1971

Langue:

english

Fichier:

PDF, 98 KB

english, 1971

34

The E(k) Relation for a Two-Band Scheme of Semiconductors and the Application to the Metal-Semiconductor Contact

Journal:

physica status solidi (b)

Année:

1972

Langue:

english

Fichier:

PDF, 433 KB

english, 1972

35

Schottky-barrier theory and the complex band structure

Journal:

physica status solidi (b)

Année:

1978

Langue:

english

Fichier:

PDF, 189 KB

english, 1978

36

The Common Origin of U-Shaped Distributions and Fermi-Level Pinning

Journal:

physica status solidi (b)

Année:

1987

Langue:

english

Fichier:

PDF, 201 KB

english, 1987

37

The Quadratic Response of a Fermi Gas for Arbitrary Degree of Degeneracy

R. Pickenhain, B. Flietner, K. Unger

Journal:

physica status solidi (b)

Année:

1989

Langue:

english

Fichier:

PDF, 469 KB

english, 1989

38

Heterojunctions in photovoltaic applications

L. Elstner, E. Conrad, H. Eschrich, W. Füssel, H. Flietner

Journal:

physica status solidi (b)

Année:

1996

Langue:

english

Fichier:

PDF, 657 KB

english, 1996

39

Investigation of native-oxide growth on HF-treated Si(111) surfaces by measuring the surface-state distribution

H. Angermann, Th. Dittrich, H. Flietner

Journal:

Applied Physics A: Materials Science & Processing

Année:

1994

Langue:

english

Fichier:

PDF, 497 KB

english, 1994

40

Preparation of H-terminated Si surfaces and their characterisation by measuring the surface state density

H. Angermann, K. Kliefoth, H. Flietner

Journal:

Applied Surface Science

Année:

1996

Langue:

english

Fichier:

PDF, 402 KB

english, 1996

41

Radiation induced degradation of Si/SiO2 structures and the nature of defects

W. Füssel, M. Schmidt, H. Flietner

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1992

Langue:

english

Fichier:

PDF, 378 KB

english, 1992

42

IR study of short-range and local order in SiO2 and SiOx films

Igor P. Lisovskii, Vladimir G. Litovchenko, Vladimir B. Lozinskii, Sergey I. Frolov, Hans Flietner, Walter Fussel, Elena G. Schmidt

Journal:

Journal of Non-Crystalline Solids

Année:

1995

Langue:

english

Fichier:

PDF, 299 KB

english, 1995

43

Spectrum and nature of defects at interfaces of semiconductors with predominant homopolar bonding

Journal:

Surface Science

Année:

1988

Langue:

english

Fichier:

PDF, 836 KB

english, 1988

44

Spectrum and nature of surface states

Journal:

Surface Science

Année:

1974

Langue:

english

Fichier:

PDF, 956 KB

english, 1974

45

[IEEE International Symposium on VLSI Technology Systems and Applications - Taipei, Taiwan (8-10 June 1999)] 1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) - Array pass transistor design in trench cell for Gbit DRAM and beyond

Li, Y., Mandelman, J., Parries, P., Matsubara, Y., Ye, Q., Rengarajan, R., Alsmeier, J., Flietner, B., Wheeler, D., Akatsu, H., Divakaruni, R., Mohler, R., Sunouchi, K., Bronner, G., Chen, T.C.

Année:

1999

Langue:

english

Fichier:

PDF, 354 KB

english, 1999

46

[IEEE International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95 - Stockholm, Sweden (June 25-29, 1995)] Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95 - Dipol- And Charge Transfer Contributions To The Work Function Change Of Semiconducting Thin Films: Experiment And Theory

Geistlinger, H., Eisele, I., Flietner, B.

Année:

1995

Langue:

english

Fichier:

PDF, 360 KB

english, 1995

47

[IEEE International Electron Devices Meeting. Technical Digest - San Francisco, CA, USA (8-11 Dec. 1996)] International Electron Devices Meeting. Technical Digest - Trench storage node technology for gigabit DRAM generations

Muller, K.P., Flietner, B., Hwang, C.L., Kleinhenz, R.L., Nakao, T., Ranade, R., Tsunashima, Y., Mii, T.

Année:

1996

Langue:

english

Fichier:

PDF, 732 KB

english, 1996

48

Adsorption induced gas transport phenomena in narrow air channels recorded with work function detectors

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Année:

1996

Langue:

english

Fichier:

PDF, 446 KB

english, 1996

49

Passivity and electronic properties of the silicon/silicondioxide interface

Journal:

Materials Science Forum

Année:

1995

Langue:

english

Fichier:

PDF, 745 KB

english, 1995

50

[IEEE TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers - San Francisco, CA, USA (24-27 June 1991)] TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers - Influence of the gate insulator on gas measurements with suspended gate FETs

Topart, F., Flietner, B., Josowicz, M., Leu, M., Lorenz, H., Peschke, M., Riess, H., Eisele, I.

Année:

1991

Fichier:

PDF, 198 KB

1991